Semiconductor process system and method

ABSTRACT

A system includes a first mask, a second mask and a mask container. The first mask includes a first identification code and a second identification code. The second mask includes a third identification code and a fourth identification code. The mask container is configured to store the first mask and the second mask. The first identification code is different from the third identification code. In response to a pattern, for performing a photolithography process, on the first mask, that is different from a pattern on the second mask, the second identification code is different from the fourth identification code. In response to the pattern on the first mask being the same as the pattern on the second mask, the second identification code is the same as the fourth identification code.

CROSS-REFERENCE TO RELATED APPLICATION

The present application is a continuation application of U.S.application Ser. No. 16/517,442, filed on Jul. 19, 2019, now U.S. Pat.No. 11,302,546, issued Apr. 12, 2022, which claims priority to U.S.Provisional Application Ser. No. 62/712,198, filed Jul. 30, 2018, whichis herein incorporated by reference.

BACKGROUND

A photolithograph processes is performed to transfer a pattern on a maskto a semiconductor device. In mass production of the semiconductordevices, a plurality of masks having the same pattern may be employed,in order to increase the efficiency of production. If the plurality ofmasks having the same pattern are employed and a defective mask of thesemasks causes a defect pattern, the defective mask is not able to befound efficiently since these masks are having the same patterns.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 is a schematic top view diagram of a mask, according to someembodiments of the present disclosure.

FIG. 2 is a schematic diagram of a semiconductor process system,according to some embodiments of the present disclosure.

FIGS. 3A-3D are schematic diagrams of a spin coating process performedby the semiconductor process system in FIG. 2, according to someembodiments of the present disclosure.

FIG. 4 is a schematic diagram of the semiconductor process system inFIG. 2, according to some other embodiments of the present disclosure.

FIG. 5 is a schematic diagram of the semiconductor process performedwith the mask in FIG. 1, according to some embodiments of the presentdisclosure.

FIG. 6 is a flow chart of a method of the semiconductor processperformed by the semiconductor process system in FIGS. 2 and/or 4,according to some embodiments of the present disclosure.

FIG. 7 is a schematic top view diagram of a mask in FIG. 1, according toother embodiments of the present disclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

The terms used in this specification generally have their ordinarymeanings in the art and in the specific context where each term is used.The use of examples in this specification, including examples of anyterms discussed herein, is illustrative only, and in no way limits thescope and meaning of the disclosure or of any exemplified term.Likewise, the present disclosure is not limited to various embodimentsgiven in this specification.

Although the terms “first,” “second,” etc., may be used herein todescribe various elements, these elements should not be limited by theseterms. These terms are used to distinguish one element from another. Forexample, a first element could be termed a second element, and,similarly, a second element could be termed a first element, withoutdeparting from the scope of the embodiments. As used herein, the term“and/or” includes any and all combinations of one or more of theassociated listed items.

In this document, the term “coupled” may also be termed as “electricallycoupled”, and the term “connected” may be termed as “electricallyconnected”. “Coupled” and “connected” may also be used to indicate thattwo or more elements cooperate or interact with each other.

Reference is now made to FIG. 1. FIG. 1 is a schematic top view diagramof a mask 100, according to some embodiments of the present disclosure.In some embodiments, the mask 100 is employed, in a semiconductormanufacturing process, to form a pattern of a circuit or a device. Insome embodiments, the mask 100 is referred to as a photomask. In someother embodiments, the mask 100 is referred to as a reticle.

The mask 100 includes a first identification code 101, a secondidentification code 102, a first align mark 103, a second align mark104, and a pattern 105. In some embodiments, the pattern 105 isconfigured to be transformed on substrates during the semiconductormanufacturing process (e.g., lithographic process), in order to form ageometric structure of a device in an integrated circuit (IC).

In some non-limiting scenarios where the IC(s) are mass-produced, two ormore masks 100 having the same pattern 105 and a plurality of maskshaving other patterns (hereinafter referred to as “second masks”) areemployed to fabricate the ICs. The second masks are employed to formother structure of the device or to form other devices in the IC. Insome embodiments, the first identification code 101 is configured todistinguish a specific mask from the masks 100. In the semiconductormanufacturing process, the masks 100 may be affected by various factorsincluding process variation, contamination, electrostatic discharge,etc., resulting in different defective patterns 105 on the masks 100.Thus, in practical applications, even the masks 100 are configured tohave the same pattern 105, the patterns 105 of the masks 100 may bedifferent from each other due to the factors discussed above. With thefirst identification code 101, one specific mask is able to bedistinguished from the masks 100. For example, the first identificationcode 101 is able to be read by a scanner device 210 shown in FIG. 2below, in order to select the specific mask from the masks 100. Thefirst identification code 101 on each mask 100 indicates a uniqueidentity of each mask 100. In other words, the first identificationcodes 101 on the masks 100 are different. In some embodiments, the firstidentification code 101 on each mask 100 is unique, and is independentfrom other first identification codes on the masks 100.

In some embodiments, the first identification code 101 is implemented ina form of image. In some embodiments, the first identification code 101is implemented in a form of symbols. In some embodiments, the firstidentification code 101 is an image combined with symbols. For example,the first identification code is Arabic numerals, English alphabet,mathematical symbols, or a combination thereof.

In some embodiments, the second identification code 102 is configured todistinguish patterns 105 of the masks 100 from patterns of the secondmasks. The second identification code 102 indicates a unique identity ofthe pattern 105. As described above, the masks 100 are configured tohave the same pattern 105. Under this condition, the secondidentification codes 102 on each mask 100 are the same. If a mask (e.g.,second masks discussed above) is configured to have a pattern differentfrom the pattern 105, the second identification code 102 on this mask isdifferent from the second identification code 102 on the masks 100.Accordingly, with the second identification code 102, a specific patternon the masks is able to be identified. For example, the secondidentification code 102 of the mask 100 is able to be read by thescanner device 210 shown in FIG. 2, in order to acquire that a patternexpected to be formed on a substrate through the mask 100 is the pattern105.

In some embodiments, the second identification code 102 is a barcode.The barcode is configured to provide information about the pattern 105.In some embodiments, the second identification code 102 is configured toprovide part of information of the first identification code 101. Forexample, a serial number of “AA123B” is for indicating that a pattern onany mask is the pattern 105. Under this condition, information providedfrom the second identification code 102 on a specific mask 100 includesthe serial number of “AA123B.” Correspondingly, information providedfrom the first identification code 101 on this specific mask 100includes a serial number of “AA123B-2.” Accordingly, by reading thefirst identification code 101, the specific mask 100 is able to beidentified as one mask that has the pattern 105 corresponding to theserial number of “AA123B.”

The implementations of the second identification code 102 are given forillustrative purposes. Various types of the second identification code102 are within the contemplated scope of the present disclosure.

In some embodiments, the first align mark 103 and the second align mark104 are configured to be aligned by at least one manufacturing tool, inorder to transfer the pattern 105 onto a wafer. During the semiconductorprocesses, the first align mark 103 and the second align mark 104 arealigned to improve the quality of the semiconductor processes. Forexample, the first align mark 103 and the second align mark 104 arealigned in a photolithograph process to improve the accuracy ofalignment. The amount and the shape of the first align mark 103 and thesecond align mark 104 shown in FIG. 1 are given for the illustrativeproposes. Various amounts and the shapes of the first align mark 103 andthe second align mark 104 are within the contemplated scope of thepresent disclosure.

In some embodiments, the first identification code 101, the secondidentification code 102, the first align mark 103, and the second alignmark 104, as discussed above, are located adjacent to the pattern 105.For example, the pattern 105 is substantially disposed at the center ofthe mask 100. In non-limiting examples, the first identification code101 is disposed at an upper right corner with respect to the mask 100.The second identification code 102 is disposed at a lower right cornerwith respect to the mask 100. The first align mark 103 is disposed at anupper left corner with respect to the mask 100. The second align mark104 is disposed at a lower left corner with respect to the mask 100.

The locations of the first identification code 101, the secondidentification code 102, the first align mark 103, the second align mark104, and the pattern 105 in FIG. 1 are given for the illustrativeproposes. Various locations of the first identification code 101, thesecond identification code 102, the first align mark 103, the secondalign mark 104, and the pattern 105 are within the contemplated scope ofthe present disclosure. For example, the first align mark 103 and thesecond align mark 104 are disposed at the opposite sides of the mask100.

Reference is now made to FIG. 2. FIG. 2 is a schematic diagram of asemiconductor process system 200, according to some embodiments of thepresent disclosure. In some embodiments, the semiconductor processsystem 200 is employed to form various semiconductor devices with themask 100 in FIG. 1. In some embodiments, the semiconductor processsystem 200 is configured to perform a photolithography process, forexample, an extreme ultraviolet (EUV) exposure process.

The semiconductor process system 200 includes a scanner device 210 and atracker device 220. For illustration in FIG. 2, the scanner device 210is coupled to the tracker device 220. The scanner device 210 cooperateswith the tracker device 220 to perform the photolithography process.

In some embodiments, the scanner device 210 is configured to scan thefirst identification code 101 in FIG. 1, in order to select a specificmask from the masks 100 to perform the photolithography process. In someembodiments, the scanner device 210 is configured to scan the secondidentification code 101 in FIG. 1, in order to distinguish the mask 100from the second masks. Detailed operations of the scan device 210 aregiven with reference to FIGS. 4-6.

In some embodiments, the tracker device 220 is configured to hold asubstrate 230 to perform the photolithography process. Alternativelystated, the tracker device 220 is configured to transport the substrate230 to a proper position to be processed by a corresponding process. Insome embodiments, the substrate 230 is a silicon (Si) wafer.

In some embodiments, the tracker device 220 is further configured tocoat a photoresistor layer 235 on the substrate 230 after the substrate230 is transported. For example, the tracker device 220 performs a spincoating process on the substrate 230. The spin coating process will bedescripted in detail with reference of FIGS. 3A-3D shown below.

In some embodiments, the tracker device 220 is further configured toperform a development process to the substrate 230 with thephotoresistor layer 235. For example, the tracker device 220 developsthe photoresistor layer 235 on the substrate 230 after the photoresistorlayer 235 has been patterned by an exposure process. In someembodiments, the tracker device 220 is configured to remove a part ofthe photoresistor layer 235, in order to form a pattern on the substrate230. In some other embodiments, the tracker device 220 is configured todissolve the photoresistor layer 235 by a developer to form a pattern onthe substrate 230.

Reference is now made to FIGS. 3A-3D. FIGS. 3A-3D are schematic diagramsillustrating operations of a spin coating process performed by thesemiconductor process system 200 in FIG. 2, according to someembodiments of the present disclosure. For ease of understanding, likeelements in FIGS. 3A-3D are designated with the same reference numberswith respect to FIG. 2.

In some embodiments, the tracker device 220 in FIG. 2 includes adispenser 221 and a holder 222. The dispenser 221 is configured todispense the photoresistor to the substrate 230 to form thephotoresistor layer 235. The holder 222 is configured to hold thesubstrate 230 in order to be processed. In some embodiments, the holder222 is configured to vacuum the substrate 230, in order to prevent thesubstrate 230 from tilting and moving around.

For illustration in FIG. 3A, the holder 222 vacuums the substrate 230 tofix the substrate 230 on the holder 222. The dispenser 221 dispenses thephotoresistor on the center of the substrate 230. The photoresistor isdisposed substantially around the center of the substrate 230.

For illustration in FIG. 3B, the holder 222 spreads the photoresistoramong the surface of the substrate 230. In some embodiments, the holder222 is configured to spin at a first speed V1, in order to coat thephotoresistor among the surface of the substrate 230. Alternativelystated, the holder 222 rotates at the first speed V1 with the vacuumedsubstrate 230, and the photoresistor is spread on the surface of thesubstrate 230 due to the centripetal force generated from the rotation.In some embodiments, when the holder 222 is rotating at the first speedV1, the dispenser 221 still dispenses the photoresistor with a fixedflux. In some other embodiments, when the holder is rotating at thefirst speed V1, the dispenser 221 dispenses the photoresistor with areduced flux.

For illustration in FIG. 3C, the holder 222 is configured to spin at asecond speed V2 to coat the photoresistor on the substrate 230. In someembodiments, the holder 222 rotates at the second speed V2 with thevacuumed substrate 230, such that the photoresistor is spread to reachan edge of the surface of the substrate 230. In some embodiments, theholder 222 is configured to remove the excess photoresistor on thesubstrate 230, and the excess photoresistor is removed from the edge ofthe surface of the substrate 230. In some embodiments, when the folder222 is rotating at the second speed V2, the dispenser 221 stopsdispensing the photoresistor, and the dispenser 221 is moved away fromthe center of the substrate 230. In some embodiments, the second speedV2 is faster than the first speed V1.

For illustration FIG. 3D, the holder 222 is configured to spin at athird speed V3, in order to further spread the photoresistor on thesubstrate 230. In some embodiments, the holder 222 is configured tosubstantially and evenly coat the photoresistor on the substrate 230, inorder to form the photoresistor layer 235 in FIG. 2. In someembodiments, the photoresistor layer is substantially even among thesurface of the substrate 230. In some other embodiments, thephotoresistor layer 235 is thicker at the center of the substrate 230,and is thinner at the edge of the substrate 230. Alternatively stated,the thickness of the photoresistor layer 235 gradually decreases fromthe center of the substrate 230 to the edge of the substrate 230. Insome embodiments, the third speed V3 is equal to the second speed V2. Insome further embodiments, the third speed V3 is faster than the secondsped V2. In some alternative embodiments, the third speed V3 is slowerthan the second speed V2, and is faster than the first speed V1.

In FIGS. 3B-3D, the spin direction is illustrated as clockwisedirection. The spin direction shown in FIGS. 3B-3D is given for theillustrative purposes. Various spin directions are within thecontemplated scope of the present disclosure. For example, the holder222 is rotated in counterclockwise direction.

The above photoresistor, the first speed V1, the second speed V2, andthe third speed V3 shown in FIGS. 3A-3D are only given for theillustrative proposes. Various photoresistors and various values of thefirst speed V1, the second speed V2, and the third speed V3 are withinthe contemplated scope of the present disclosure.

Reference is now made to FIG. 4. FIG. 4 is a schematic diagram of thesemiconductor process system 200 in FIG. 2, according to someembodiments of the present disclosure. For ease of understanding, likeelements in FIG. 4 are designated with the same reference numbers withrespect to FIG. 1 and FIG. 2.

In some embodiments, the semiconductor process system 200 furtherincludes at least one mask container 300. The at least one maskcontainer 300 is configured to store the mask 100. In some embodimentswhere a plurality of masks 100 are employed, a plurality of maskcontainers 300 are employed to store the plurality of masks 100. In someembodiments, the scanner device 210 is configured to read the firstidentification codes 101, in order to select a predetermined mask fromthe masks.

In some embodiments, the mask container 300 includes a thirdidentification code 301. In some embodiments, the third identificationcode 301 indicates an identity of a mask stored in the masker container300. In some embodiments, the third identification code 301 isconfigured to indicate that a stored mask in the mask container 300 isexpected to be the mask 100. In some embodiments, the thirdidentification code 301 is a radio frequency identification (RFID) tag.

In some embodiments, the scanner device 210 includes an image recognizer211, an RFID reader 212, and a database 213. For illustration in FIG. 4,the image recognizer 211 is coupled to the database 213. The RFID reader212 is coupled to the database 213.

In some embodiments, the image recognizer 211 is configured to read thefirst identification code 101 on the mask 100. In some furtherembodiments, the image recognizer 211 is configured to read the firstidentification codes 101 on the plurality of masks 100, in order toselect a specific mask 100 from the plurality of masks 100. With theselected specific mask 100, the pattern 105 is able to be formed on thesubstrate 230. Alternatively stated, the scanner device 210 is able toread, by the image recognizer 211, the first identification codes 101 toselect the specific mask 100 to perform the semiconductor processes.

In some embodiments, the RFID reader 212 is configured to read the thirdidentification code 301 on the mask container 300. In some furtherembodiments, the RFID reader 212 is configured to read the thirdidentification codes to select a specific mask container 300 from theplurality of mask containers 300, in order to acquire the mask 100. Insome embodiments, the mask 100 is acquired to perform the semiconductorprocesses. Alternatively stated, the scanner device 210 is able to read,by the RFID reader 212, the third identification codes 301 from theplurality of mask containers 300 to select the mask container 300 fromthe plurality of mask containers 300 to perform the semiconductorprocesses, in which the mask 100 is considered to be stored in the maskcontainer 300. For example, the scanner device 210 acquires the mask 100from the selected mask container 300 to perform the exposure process.

In some further embodiments, the database 213 is configured to storeinformation regarding the first identification code 101 of each mask 100and the third identification code 301 of each mask container 300. Insome embodiments, the plurality of masks 100 correspond to the pluralityof mask containers 300 respectively. For example, if a specific mask 100is expected to be stored in a specific mask container 300, the firstidentification code 101 of the specific mask 100 is configured tocorrespond to the third identification code 301 of the specific maskcontainer 300. Under this condition, the first identification code 101and its corresponding third identification code 301 may be referred toas an “identification code pair.” In some embodiments, informationregarding identification code pairs for the plurality of masks 100 andthe plurality of mask containers 300 are stored in the database 213.

In some embodiments, the scanner device 210 is configured to compare thefirst identification code 101 read by the image recognizer 211 with thethird identification code 301 read by the RFID reader 212. For example,if information provided from the first identification code 101 andinformation provided from the third identification code 301 are designedwith the same syntax, the scanner device 210 may directly compare thefirst identification code 101 with the third identification code 301. Ifthe first identification code 101 matches the third identification code301, it indicates that the mask container 300 stores the correct mask100. Under this condition, the mask 100 is retrieved from the maskcontainer 300, in order to perform the subsequent process.Alternatively, if the first identification code 101 does not match thethird identification code 301, it indicates that the mask container 300stores a wrong mask 100, and an additional check is performed to correctthis situation.

In some embodiments, if the information provided from the firstidentification code 101 and the information provided from the thirdidentification code 301 are designed with different syntaxes, thescanner device 210 is configured to determine, based on the informationstored in the database 213, whether the third identification code 301matches to the first identification code 101. For example, the scannerdevice 210 is further configured to determine whether the firstidentification coed 101 and the third identification code 301 matchesthe identification code pairs stored in the database 213, in order toverify whether the first identification code 101 and the thirdidentification code 301 are matched. If these codes match theidentification code pairs stored in the database 213, it indicates thatthe mask container 300 stores the correct mask 100. Alternatively, ifthese codes do not match the identification code pairs stored in thedatabase 213, it indicates that the mask container 300 stores the wrongmask 100.

In some embodiments, the RFID reader 212 is further configured to writethe third identification code 301. The scanner device 210 is able towrite, by the RFID reader 212, the third identification code 301according the first identification code 101 on the mask 100. Forexample, the scanner device 210 is configured to transform the firstidentification code 101 on a specific mask 100 into a form of the thirdidentification code 301 of the specific mask container 300, in order toassign the specific mask container to store the specific mask 100.Alternatively stated, the scanner device 210 is configured to transferthe information about the first identification codes 101 into a formwhich is readable by the RFID reader 212.

For example, the scanner device 210 reads the first identification code101 on the mask 100, and further transfers the first identification code101 into the form of the RFID tag. Next, the scanner device 210 writesthe information of the RFID tag into the third identification 301. Thethird identification code 301 thus has the information of the firstidentification code 101. With the above operations, the mask container300 is assigned to store the mask 100 having the transferred firstidentification code 101.

In some embodiments, the scanner device 210 is further configured toread the second identification code 102 on the mask 100. In someembodiments, the scanner device 210 includes a barcode reader (notshown). The barcode reader is configured to read a barcode, for example,the second identification code 102. In some embodiments, when thepatterns are different, the scanner device 210 is able to distinguishfrom the different patterns by reading the second identification code102 on each mask. In some embodiments, the scanner device 210 isconfigured to read the first identification 101 and the secondidentification code 102 simultaneously. In some other embodiments, thescanner device 210 is configured to read the first identification code101 and the second identification code 102 at different time intervals.

Reference is now made to FIG. 5. FIG. 5 is a schematic diagram ofillustrating a semiconductor process performed with the mask 100 in FIG.1, according to some embodiments of the present disclosure. For ease ofunderstanding, like elements in FIG. 5 are designated with the samereference numbers with respect to FIGS. 1 and 2.

In some embodiments, the semiconductor process includes aphotolithography process. In some embodiments, the scanner device 210further includes a light source 214 and an exposure system 215. Thescanner device 210 is configured to perform the photolithography processon the substrate 230.

In some embodiments, the light source 214 is configured to generatelight, for example, a EUV light, an ultraviolet (UV) light, or a visiblelight. In some embodiments, the light source 214 is configured togenerate a laser. The types of the light generated from the light sourceabove are given for the illustrative proposes. Various types of light,polarizations, coherence, and spectrum ranges are within thecontemplated scope of the present disclosure.

In some embodiments, the exposure system 215 is configured to direct thelight generated from the light source 214 toward the wafer (e.g.,substrate 230). In some embodiments, the exposure system 215 isconfigured to focus the light on the wafer to expose the photoresistorlayer 235.

For illustration in FIG. 5, the scanner device 210 performs thephotolithography process on the substrate 230. The light source 214generates the light toward the mask 100. The light passes through thepattern 105 on mask 100. Equivalently, the light brings the informationof the pattern 105 after passing the pattern 105 on the mask 100. Theexposure system 215 receives the light passing through the pattern 105on the mask 100, and directs the light toward the substrate 230. Theexposure system 215 focuses the light on a predetermined position of thesubstrate 230. As a result, the information of the pattern 105 on themask 100 travels with the light to the substrate 230. Equivalently, thescanner device 210 transfers the information of the pattern 105 on themask 100 to the photoresistor layer 235 on the substrate 230.Alternatively stated, the scanner device 210 performs thephotolithography process to pattern the photoresistor layer 235. Theabove configuration of the photolithography process is given for theillustrative proposes. Various configurations of photolithographyprocess are within the contemplated scope of the present disclosure. Forexample, the mask 100 is a reflective type mask. The light generated bythe light source 214 is transmitted to the mask 100 and is reflect tothe exposure system 215 or the substrate 230.

Reference is made to FIGS. 2, 3A-3D, 4, and 5, again. In FIGS. 3A-3D,the substrate 230 is processed under the spin coating process to havethe photoresistor layer 235 thereon, as shown in FIG. 2. In FIG. 4, themask container 300 is transported to the semiconductor process system200, and the third identification code 301 on the mask container 300 isread by the RFID reader 212 of the scanner device 210. The maskcontainer 300 is opened by the semiconductor process system 200 to reachthe mask 100 stored in the mask container 300. The first identificationcode 101 of the mask 100 is read by the image reader 211 of the scannerdevice 210. After the third identification code 301 and the firstidentification code 101 are read, the scanner device 210 compares thethird identification code 301 with the first identification code 101, inorder to determine whether the mask container 300 matches the mask 100according to the “identification code pair” stored in the database 213.In FIG. 5, if the third identification code 301 and the firstidentification code 101 are determined to be matched, thephotolithography process is performed with the mask 100 to expose thephotoresistor layer 235 through the pattern 105 of the mask 100 asillustrated in FIG. 1. The tracker device 220 develops the exposedphotoresistor layer 235 in order to form a pattern corresponding to thepattern 105 by etching part of the photoresistor layer 235. Thesubstrate 230 then has a pattern corresponding to the pattern 105 on themask 100 which has been identified by reading the identification code101. In some embodiments, the substrate 230 is processed by animplantation process after the part of photoresistor layer 235 isetched. The implantation process is performed to implant a region on thesubstrate 230 where there is no photoresistor layer 235. In someembodiments, the implanted region is for further defining a region ofsource or drain structures of a transistor. The region is also referredto as an active region or the oxide definition (OD) region in someembodiments.

Reference is now made to FIG. 6 and FIG. 7. FIG. 6 is a flow chart of amethod 600 of the semiconductor process performed by the semiconductorprocess system 200 in FIGS. 2 and/or 4 according to some embodiments ofthe present disclosure. FIG. 7 is a schematic top view diagram of a mask700 in FIG. 1, according to some embodiments of the present disclosure.For ease of understanding, like elements in FIG. 7 are designated withthe same reference numbers with respect to FIG. 1.

As an example, operations of the method 600 are described with referenceto the mask 100 shown in FIG. 7. In some embodiments, the firstidentification code 101 is implemented with symbols. For example, asshown in FIG. 7, the first identification code 101 is “EXB77111.” Thesecond identification code 102 is implemented as a barcode. The firstalign mark 703 is in the form of a cross. The second align mark 704 isin the form of a triangle. The above implementations and shapes aregiven for illustrative purposes, and the present disclosure is notlimited to FIG. 7.

In some embodiments, the method 600 includes operations S601, S602,S603, S604, S605, and S606. In operation S601, with reference to FIG. 2,FIG. 4, and FIG. 7, the image recognizer 211 reads the firstidentification code 101 on the mask 700 of the masks. For example, theimage reader 211 in FIG. 4 reads the first identification code 101 toacquire a corresponding information of “EXB7711,” and transmits theinformation of “EXB7711” to the database 213.

In some embodiments, during operation S601, the scanner device 210 readsthe second identification code 102 on the mask 100 and transmits theinformation contained in the barcode to the database 213.

In operation S602, the RFID reader 212 reads the third identificationcode 301 on the mask container 300 of the mask containers. The RDIFreader 212 transmits the information of the third identification code301 to the database 213.

In operation S603, the scanner device 210 compares the information ofthe first identification code 101 and the third identification code 301with the identification code pairs stored in the database 213.

If the first identification code 101 and the third identification code301 are matched, operation S604 is performed. Under this condition, itindicates that a mask stored in the mask container 300 is the specificmask 100.

If the first identification code 101 and the third identification code301 are not matched, it indicates that the mask container 300 may storea wrong mask 100, or that a wrong mask container 300 is selected inoperation S602. In some embodiments, under this condition, a warningmessage is sent by the semiconductor process system 200 in FIG. 2, inorder to notify an operator and/or an engineer to check the masks 100and/or the mask containers 300.

In some embodiments, during the operation S603, the scanner device 210writes the information of the first identification code 101 read by theimage reader 211 into the third identification code 301. Thus, theidentification code 301 carries the information of the firstidentification code 101. Accordingly, the mask 100 is expected beingstored in the mask container 300.

Based on the above operations, the identities of the mask containers andthe masks are checked and matched to each other according to theidentification code pairs.

In some approaches, only identification code for indicating a pattern isemployed to identify the mask. However, if a plurality of masks are usedin mass production, a specific mask is not able to be found or confirmedby reading the identification code for indicating the pattern. As aresult, in these approaches, a defective mask may be incorrectly used toperform the semiconductor process.

Compared to the above approaches, with the first identification code101, the scanner device 210 is able to distinguish the mask 100 fromother masks. As a result, a specific mask 100 can be found, in order toprevent from using the defective mask. Moreover, the scanner device 210is also able to determine whether the mask 100 is expected to be storedin the mask container 300 by reading the third identification code 301.The scanner device 210 is able to write the information of the firstidentification code 101 to the third identification code 301 on the maskcontainer 300. Therefore, when the scanner device 210 reads the thirdidentification code 301 on the mask container 300, the mask 100 isexpected to be stored in the mask container 300, the semiconductorprocess system 200 has a lower chance using a wrong mask to perform thesemiconductor process. Therefore, the quality of the semiconductorprocess is improved, and the cost of the semiconductor process isdecreased.

In operation S604, the tracker device 220 coats the photoresistor on thesubstrate 230. For example, with reference to FIGS. 2-4, the trackerdevice 220 performs the spin coating process to the substrate 230. Theholder 222 vacuums the substrate 230. After the substrate 230 standsstable on the holder 222, the dispenser 221 dispenses the photoresistoron the center of the substrate 230. Next, the tracker device 220 spreadsthe photoresistor among the surface of the substrate 230 by spinning theholder 222. In some embodiments, the holder 222 spins at a first speedV1 when the holder 222 begins to spin, and then the holder 222 spins ata second speed V2 which is faster than the first speed V1 after acertain period. The photoresistor layer 235 is formed after the trackerdevice 220 spreads the photoresistor. In some embodiments, thephotoresistor layer 235 is formed to be substantially flat among thesurface of the substrate 230.

In operation S605, the scanner device 210 performs the exposure processon the photoresistor layer 235 with the pattern 105 on the mask 700. Thelight source 214 generates light toward the mask 100. In someembodiments, the light passes through the pattern 105 and is patternedby the pattern 105. The exposure system 215 directs and focuses thelight on the photoresistor layer 235 on the substrate 230. Alternativelystated, the photoresistor layer 235 is exposed by the patterned light.

In operation S606, the tracker device 220 performs the developmentprocess on the photoresistor layer 235 being exposed. The photoresistorlayer 235 is patterned after being developed. Therefore, the pattern 105on the mask 100 is patterned on the photoresistor layer 235.Alternatively stated, a layout corresponding to the pattern 105 of themask 100 is developed on the substrate 230. The substrate 230 with thepatterned photoresistor layer 235 is proceeded to be processed to asemiconductor device.

The above illustrations include exemplary operations, but the operationsare not necessarily performed in the order shown. Operations may beadded, replaced, changed order, and/or eliminated as appropriate, inaccordance with the spirit and scope of various embodiments of thepresent disclosure. For example, in various embodiments, operationsS601-S603 are able to be performed after operation S604. Alternatively,operations S601-S603 and operation S604 are able to be performedsimultaneously.

As described above, with the arrangement of the mask 100 provided inembodiments of the present disclosure, a specific mask can bedistinguished from other masks. Accordingly, it is able to select thespecific mask to perform various semiconductor processes. As a result,the accuracy and the efficiency of semiconductor manufacturing processare improved.

Also disclosed is a system. The system includes a first mask, a secondmask and a mask container. The first mask includes a firstidentification code and a second identification code. The second maskincludes a third identification code and a fourth identification code.The mask container is configured to store the first mask and the secondmask. The first identification code is different from the thirdidentification code. In response to a pattern, for performing aphotolithography process, on the first mask, that is different from apattern on the second mask, the second identification code is differentfrom the fourth identification code. In response to the pattern on thefirst mask being the same as the pattern on the second mask, the secondidentification code is the same as the fourth identification code.

Also disclosed is a method. The method includes: storing a first mask ina mask container; selecting the mask container from a plurality of maskcontainers according to a first identification code on the maskcontainer, in which the first identification code is configured toindicate an identity of the first mask; comparing the firstidentification code and a second identification code on the first mask;and performing a photolithography process with the first mask inresponse to the first identification code matching the secondidentification code.

Also disclosed is a method. The method includes: reading a firstidentification code on a first mask to distinguish the first mask from asecond mask; reading a second identification code on the second mask toidentify that the second mask having a first pattern, when the secondidentification code is the same as a third identification code on thefirst mask, wherein part of information of the first identification codeis provided by the third identification code, and is configured toindicate the first mask having the first pattern; and forming asemiconductor device according to the first mask having the firstpattern, in a photolithography process.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A system, comprising: a first mask comprising afirst identification code and a second identification code; a secondmask comprising a third identification code and a fourth identificationcode; and a mask container configured to store the first mask and thesecond mask, wherein the first identification code is different from thethird identification code, in response to a pattern, for performing aphotolithography process, on the first mask, that is different from apattern on the second mask, the second identification code is differentfrom the fourth identification code, and in response to the pattern onthe first mask being the same as the pattern on the second mask, thesecond identification code is the same as the fourth identificationcode.
 2. The system of claim 1, further comprising: a scanner deviceconfigured to scan the first identification code to select the firstmask from a plurality of masks to perform the photolithography process.3. The system of claim 2, wherein the mask container comprises a fifthidentification code, and the scanner device is further configured toread the fifth identification code to select the mask container from aplurality of mask containers.
 4. The system of claim 3, wherein thescanner device comprises: a database configured to store informationregarding the first identification code and the fifth identificationcode, wherein when the fifth identification code and the firstidentification code have different syntaxes, the scanner device isfurther configured to compare the fifth identification code and thefirst identification code based on the information, to determine whetherthe fifth identification code matches to the first identification code.5. The system of claim 3, wherein when the fifth identification code andthe first identification code have a same syntax, the scanner device isfurther configured to compare the fifth identification code and thefirst identification code.
 6. The system of claim 3, wherein the scannerdevice is further configured to transfer the first identification codeinto a RFID tag, and write information of the RFID tag into the fifthidentification code.
 7. The system of claim 1, wherein the secondidentification code is configured to provide part of information of thefirst identification code.
 8. A method, comprising: storing a first maskin a mask container; selecting the mask container from a plurality ofmask containers according to a first identification code on the maskcontainer, wherein the first identification code is configured toindicate an identity of the first mask; comparing the firstidentification code and a second identification code on the first mask;and performing a photolithography process with the first mask inresponse to the first identification code matching the secondidentification code.
 9. The method of claim 8, further comprising:designing the second identification code and the first identificationcode with different syntaxes; storing information of the secondidentification code and the first identification code into a database;and in response the second identification code and the firstidentification code being designed with the different syntaxes,determining whether the first identification code matches to the secondidentification code based the information stored in the database. 10.The method of claim 8, further comprising: writing the firstidentification code on the mask container according to the secondidentification code.
 11. The method of claim 10, wherein writing thefirst identification code comprises: transforming the secondidentification code into a radio frequency identification tag; andwriting the radio frequency identification tag into the firstidentification code.
 12. The method of claim 11, further comprising:after writing the radio frequency identification tag, assigning the maskcontainer to store the first mask.
 13. The method of claim 8, furthercomprising: disposing a third identification code on a locationdifferent from a location of the second identification code; andproviding a part of information of the second identification code by thethird identification code.
 14. The method of claim 13, furthercomprising: comparing the part of information with a fourthidentification code on a second mask stored in the mask container; andindicating a pattern on the second mask is the same as a pattern on thefirst mask, in response to the part of information is the same as thefourth identification code.
 15. A method, comprising: reading a firstidentification code on a first mask to distinguish the first mask from asecond mask; reading a second identification code on the second mask toidentify that the second mask having a first pattern, when the secondidentification code is the same as a third identification code on thefirst mask, wherein part of information of the first identification codeis provided by the third identification code, and is configured toindicate the first mask having the first pattern; and forming asemiconductor device according to the first mask having the firstpattern, in a photolithography process.
 16. The method of claim 15,further comprising: storing the first mask in a mask container; readinga fourth identification code on the mask container; and indicating thefirst mask by the fourth identification code.
 17. The method of claim16, further comprising: selecting the mask container from a plurality ofmask containers according to the fourth identification code.
 18. Themethod of claim 16, further comprising: transforming the firstidentification code into a radio frequency identification tag; andwriting the radio frequency identification tag into the fourthidentification code.
 19. The method of claim 15, further comprising:comparing the part of information with the second identification code;and indicating the second mask having a second pattern different fromthe first pattern, when the part of information is different from thesecond identification code.
 20. The method of claim 15, furthercomprising: disposing a first identification code on a location on thefirst mask separated from a location of the third identification code onthe first mask.